? 2003 ixys all rights reserved advance technical information symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 300 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v dc, v ds = 0 200 na i dss v ds = v dss t j = 25c 50 a v gs = 0 v t j = 125c 3 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 26 m ? pulse test, t 300 ms, duty cycle d 2% features ? low r ds (on) hdmos tm process rugged polysilicon gate cell structure international standard package fast switching times applications motor controls dc choppers switched-mode power supplies advantages easy to mount with one screw (isolated mounting screw hole) space savings high power density ds99013(03/03) high current megamos tm fet n-channel enhancement mode symbol test conditions maximum ratings v dss t j = 25c to 150c 300 v v dgr t j = 25c to 150c; r gs = 1.0 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c mosfet chip capability 110 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 440 a i ar t c = 25 c90a e ar t c = 25 c80mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 730 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque 0.7/6 nm/lb.in. weight to-264 10 g to-264 aa (ixtk) s g d d (tab) g = gate d = drain s = source tab = drain ixtk 110n30 v dss = 300 v i d25 =110 a r ds(on) = 26m ? ? ? ? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 85 101 s c iss 7800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1700 pf c rss 600 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 ns t d(off) r g = 1.0 ? (external) 110 ns t f 30 ns q g(on) 390 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 60 nc q gd 180 nc r thjc 0.17 k/w r thck 0.15 k/w source-drain diode ratings and characteristics (t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 110 a i sm repetitive; pulse width limited by t jm 440 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/s, v r = 100v 350 ns q rr 4 c ixtk 110n30 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2003 ixys all rights reserved ixtk 110n30 fig. 2. output characteristics @ 125 deg. c 0 20 40 60 80 10 0 12 0 0 1.5 3 4.5 6 7.5 9 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 25 50 75 10 0 12 5 15 0 0 123 45 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 3. r ds(on) normalized to i d25 value vs. junction t emperature 0.5 1 1. 5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalize d i d = 1 1 0 a i d = 55a v gs = 1 0v fig. 6. input admittance 0 25 50 75 10 0 12 5 15 0 17 5 3.5 4 4.5 5 5.5 6 6.5 v gs - volts i d - amperes t j = -40oc 25oc 1 25oc fig. 5. drain current vs. case t emperature 0 20 40 60 80 10 0 12 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 4. r ds(on) normalized to i d25 value vs. i d 0.6 1 1. 4 1. 8 2.2 2.6 3 0 30 60 90 120 150 180 210 i d - amperes r ds(on) - normalize d t j = 1 25oc t j = 25oc v gs = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixtk 110n30 fig. 10. capacitance 10 0 10 0 0 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 9. gate charge 0 2 4 6 8 10 0 80 160 240 320 400 q g - nanocoulombs v gs - volts v ds = 1 50v i d = 60a i g = 1 0ma fig. 11. maximum t ransient t hermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th)jc - (oc/w) fig. 7. transconductance 0 20 40 60 80 10 0 12 0 14 0 16 0 18 0 0 306090120150180210 i d - amperes g fs - siemens t j = -40oc 25oc 1 25oc fig. 8. source current vs. source-to-drain voltage 0 25 50 75 10 0 12 5 15 0 17 5 200 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 1 25oc t j = 25oc
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